unisonic technologies co., ltd 6n90 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r502-492.c 6.2 a , 900v n-channel power mosfet ? description the utc 6n90 is an n-channel enhancement mode power mosfet using utc?s advanced te chnology to provide costumers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 6n90 is generally applied in high efficiency switch mode power supplies. ? features * r ds(on) = 2.3 ? @v gs = 10 v * fast switching * 100% avalanche tested * improved dv/dt capability ? symbol 1.gate 3.source 2.drain 1 1 to-220 to-220f 1 to-220f1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 6n90l-ta3-t 6N90G-TA3-T to-220 g d s tube 6n90l-tf3-t 6n90g-tf3-t to-220f g d s tube 6n90l-tf1-t 6n90g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
6n90 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-492.c ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v drain current continuous (t c =25c) i d 6.2 a pulsed (note 2) i dm 24 a avalanche energy single pulsed (note 3) e as 650 mj repetitive (note 2) e ar 16.7 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 p d 167 w to-220f/to220f1 56 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 34mh, i as = 6a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 6a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.75 c/w to-220f/to220f1 2.25 c/w
6n90 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-492.c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 900 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 1.07 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =3.1a 1.85 2.3 ? forward transconductance g fs v ds =50v, i d =3.1a (note 1) 5.5 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1360 1770 pf output capacitance c oss 110 145 pf reverse transfer capacitance c rss 11 15 pf switching parameters total gate charge q g v gs =10v, v ds =720v, i d =6.2a (note 1, 2) 30 40 nc gate to source charge q gs 9.0 nc gate to drain charge q gd 12 nc turn-on delay time t d ( on ) v dd =450v, i d =6.2a, r g =25 ? (note 1, 2) 35 80 ns rise time t r 90 190 ns turn-off delay time t d ( off ) 55 120 ns fall-time t f 60 130 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 6.0 a maximum body-diode pulsed current i sm 24 a drain-source diode forward voltage v sd i s =6.2a, v gs =0v 1.4 v body diode reverse recovery time t rr i s =6.2a, v gs =0v, di f /dt=100a/s (note 1) 630 ns body diode reverse recovery charge q rr 6.9 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
6n90 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-492.c ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
6n90 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-492.c ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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